Toward high thermoelectric performance p-type FeSb2.2Te0.8via in situ formation of InSb nanoinclusions-Reference-Cited by-同舟云学术

Toward high thermoelectric performance p-type FeSb2.2Te0.8via in situ formation of InSb nanoinclusions

Published:2015 Issue:32 Volume:3 Page:8372-8380
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Tan Gangjian¹²³⁴,Chi Hang⁵⁶⁷⁸^ORCID,Liu Wei⁵⁶⁷⁸,Zheng Yun¹²³⁴,Tang Xinfeng¹²³⁴,He Jian⁹¹⁰¹¹⁸,Uher Ctirad⁵⁶⁷⁸

Affiliation:

1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing

2. Wuhan University of Technology

3. Wuhan 430070

4. China

5. Department of Physics

6. University of Michigan

7. Ann Arbor

8. USA

9. Department of Physics and Astronomy

10. Clemson University

11. Clemson

Abstract

The InSb nanoinclusions formed in situ at the grain boundaries of FeSb_2.2Te_0.8 mitigates the mobility degradation while the added grain boundaries effectively scatter heat-carrying phonons. This novel “electron-channel phonon-barrier” nanocompositing approach opens a new route to design high performance thermoelectric materials.

Funder

Basic Energy Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC01739D

Reference51 articles.

1. Filled Skutterudite Antimonides: A New Class of Thermoelectric Materials

2. Filled skutterudite antimonides: Electron crystals and phonon glasses

3. Multiple-Filled Skutterudites: High Thermoelectric Figure of Merit through Separately Optimizing Electrical and Thermal Transports