Band gap engineering and transport properties of Ba2In2O5: effect of fluorine doping and hydration-Reference-Cited by-同舟云学术

Band gap engineering and transport properties of Ba2In2O5: effect of fluorine doping and hydration

Published:2019 Issue:42 Volume:21 Page:23459-23465
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Vlasov Maxim I.¹²³⁴⁵^ORCID,Tarasova Nataliia A.⁶⁷⁵,Galisheva Anzhelika O.⁶⁷⁵,Animitsa Irina E.¹²³⁴⁵,Ananyev Maxim V.¹²³⁴⁵

Affiliation:

1. Institute of High Temperature Electrochemistry

2. Ural Branch

3. Russian Academy of Sciences

4. 620990 Yekaterinburg

5. Russia

6. Ural Federal University

7. 620002 Yekaterinburg

Abstract

This work discusses the effect of fluorine doping and hydration on the band gap width (E_g) of Ba₂In₂O₅. Several correlations between the E_g behavior and the conductivity properties of the oxide were revealed.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP04551A

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