Integration of H2V3O8 nanowires and a GaN thin film for self-powered UV photodetectors-Reference-Cited by-同舟云学术

Integration of H₂V₃O₈ nanowires and a GaN thin film for self-powered UV photodetectors

Published:2022 Issue:61 Volume:58 Page:8548-8551
ISSN:1359-7345
Container-title:Chemical Communications
language:en
Short-container-title:Chem. Commun.

Author:

Dou Yi¹²,Liang Yujun¹²^ORCID,Li Haoran¹²,Xue Yali¹²,Ye Hanlin¹²,Han Yongsheng³^ORCID

Affiliation:

1. Engineering Research Center of Nano-Geomaterials of Ministry of Education, China University of Geosciences, Wuhan 430074, China

2. Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, China

3. State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China

Abstract

A self-powered ultraviolet (UV) photodetector was successfully constructed through combining H2V3O8 nanowires (NWs) and a GaN thin film.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CC/D2CC02773A

Reference33 articles.

1. Self-Powered Ultraviolet Photodetectors Driven by Built-In Electric Field

2. Sensing of ultraviolet light: a transition from conventional to self-powered photodetector

3. An Fe-doped ZnO/BiVO4 heterostructure-based large area, flexible, high-performance broadband photodetector with an ultrahigh quantum yield

4. Fast colloidal synthesis of SnSe2 nanosheets for flexible broad-band photodetection

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