Depth profile analysis of solar cell silicon by GD-MS-Reference-Cited by-同舟云学术

Depth profile analysis of solar cell silicon by GD-MS

Published:2014 Issue:11 Volume:29 Page:2072-2077
ISSN:0267-9477
Container-title:J. Anal. At. Spectrom.
language:en
Short-container-title:J. Anal. At. Spectrom.

Author:

Di Sabatino M.¹²³,Modanese C.¹²³,Arnberg L.¹²³

Affiliation:

1. Dept. of Materials Science and Engineering

2. Norwegian University of Science and Technology (NTNU)

3. 7491 Trondheim, Norway

Abstract

Comparison of SIMS (top) and GD-MS (bottom) analyses on sample R6-2b (implanted B). dc HR-GD-MS can be used for depth profile analysis of impurities in PV Si with good sensitivity and a depth resolution of 0.5 μm. Concentration profiles of samples contaminated with B, P and Ti agreed well with implanted levels. For fast diffusing transition elements, e.g. Fe and Cu, different impurity distribution mechanisms occur. This should be taken into account when analysing these impurities.

Publisher

Royal Society of Chemistry (RSC)

Subject

Spectroscopy,Analytical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/JA/C4JA00175C

Reference13 articles.

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3. Determination of relative sensitivity factors for trace element analysis of solar cell silicon by fast-flow glow discharge mass spectrometry

4. Detection limits for glow discharge mass spectrometry (GDMS) analyses of impurities in solar cell silicon

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