MBE-grown ultrathin PtTe<sub>2</sub> films and their layer-dependent electronic structures-Reference-Cited by-同舟云学术

MBE-grown ultrathin PtTe₂ films and their layer-dependent electronic structures

Published:2022 Issue:20 Volume:14 Page:7650-7658
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhang Lei¹²^ORCID,Yang Tong³,Arramel ²⁴,Feng Yuan Ping²⁵^ORCID,Wee Andrew T. S.²⁵^ORCID,Wang Zhuo¹^ORCID

Affiliation:

1. SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China

2. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore

3. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong SAR, China

4. Nano Center Indonesia, Jl. PUSPIPTEK Tangerang Selatan, Banten 15314, Indonesia

5. Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC), National University of Singapore, 6 Science Drive 2, Singapore 117546, Singapore

Abstract

2D PtTe2 films only form below 300 °C and prefer a bilayer growth mode. The bandgap is 0.80 eV for the monolayer and 0 eV for layer numbers ≥2.

Funder

Ministry of Education - Singapore

National Research Foundation Singapore

Natural Science Foundation of Guangdong Province

Shenzhen Peacock Plan

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science