Correction: Ga[OSi(OtBu)3]3·THF, a thermolytic molecular precursor for high surface area gallium-containing silica materials of controlled dispersion and stoichiometry
Author:
Affiliation:
1. Department of Chemistry
2. University of California
3. Berkeley
4. USA
5. Department of Chemical and Biomolecular Engineering
6. Chemical Sciences Division
Abstract
Correction for ‘Ga[OSi(OtBu)3]3·THF, a thermolytic molecular precursor for high surface area gallium-containing silica materials of controlled dispersion and stoichiometry’ by James P. Dombrowski et al., Dalton Trans., 2016, 45, 11025–11034.
Publisher
Royal Society of Chemistry (RSC)
Subject
Inorganic Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/DT/C6DT90202B
Reference25 articles.
1. Heterosiloxane des Galliums und Indiums
2. Metallorganische Derivate von Phosphin-iminen
3. Tris‐trimethylsiloxy‐Verbindungen des Aluminiums und Galliums
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