Thermoelectric and electrical transport properties of Mg2Si multi-doped with Sb, Al and Zn-Reference-Cited by-同舟云学术

Thermoelectric and electrical transport properties of Mg2Si multi-doped with Sb, Al and Zn

Published:2015 Issue:39 Volume:3 Page:19774-19782
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Zhao Jianbao¹²³⁴,Liu Zhenxian⁵⁶⁷,Reid Joel⁸³⁴,Takarabe Kenichi⁹¹⁰¹¹¹²¹³,Iida Tsutomu¹⁴¹⁵¹⁶¹³,Wang Bosen¹⁷¹⁸¹⁹¹³,Yoshiya Uwatoko¹⁷¹⁸¹⁹¹³,Tse John S.¹²³⁴

Affiliation:

1. Department of Physics and Engineering Physics

2. University of Saskatchewan

3. Saskatoon

4. Canada

5. Geophysical Laboratory

6. Carnegie Institution of Washington

7. USA

8. Canadian Light Source Inc

9. Department of Applied Science

10. Faculty of Science

11. Okayama University of Science

12. Okayama

13. Japan

14. Department of Materials Science and Technology

15. Tokyo University of Science

16. Tokyo

17. The Institute for Solid State Physics

18. The University of Tokyo

19. Chiba

Abstract

A maximum ZT of 0.964 was found for Sb0.5%Zn0.5% doped Mg₂Si, which is comparable to those of PbTe based thermoelectric materials.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TA/C5TA03751D

Reference41 articles.

1. Thermoelectric Behavior of Sb- and Al-Doped n-Type Mg2Si Device Under Large Temperature Differences

2. Synthesis and Characterization of Al-Doped Mg2Si Thermoelectric Materials

3. Thermoelectric Characteristics of a Commercialized Mg2Si Source Doped with Al, Bi, Ag, and Cu

4. Solid-State Synthesis and Thermoelectric Properties of Al-Doped Mg2Si

5. First-principles and experimental studies of impurity doping into Mg2Si

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