Impact of defect states on the capacitance voltage characteristics of space charge limited organic diodes, and determination of defect states
Author:
Affiliation:
1. Department of Electrical Engineering
2. Technion-Israel Institute of Technology
3. Haifa 32000
4. Israel
5. Samtel Center for Display Technologies
6. Indian Institute of Technology Kanpur
7. Kanpur 208016
8. India
9. Department of Physics
Abstract
The capacitance rise in low frequency C–V curves originates due to diffusive storage of injected carriers within the bulk in the case of intrinsic devices, whereas a voltage dependent depletion width is the cause in the case of devices having traps.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC00027F
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1. 25th Anniversary Article: Charge Transport and Recombination in Polymer Light-Emitting Diodes
2. Recent Advances in Bulk Heterojunction Polymer Solar Cells
3. Tutorial: Organic field-effect transistors: Materials, structure and operation
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