Electrical and optoelectronic anisotropy and surface electron accumulation in ReS<sub>2</sub> nanostructures-Reference-Cited by-同舟云学术

Electrical and optoelectronic anisotropy and surface electron accumulation in ReS₂ nanostructures

Published:2023 Issue:48 Volume:15 Page:19735-19745
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Bangolla Hemanth Kumar¹^ORCID,Yusuf Fakhri Muhammad¹,Lin Ching-Hsuan¹,Cheng Cheng-Maw²³⁴⁵^ORCID,Lu Yi-Hung⁶,Fu Tsu-Yi⁶,Selvarasu Pushpa¹,Ulaganathan Rajesh Kumar⁷^ORCID,Sankar Raman⁷^ORCID,Chen Ruei-San¹^ORCID

Affiliation:

1. Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan

2. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan

3. Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan

4. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan

5. Taiwan Consortium of Emergent Crystalline Materials, National Science and Technology Council, Taipei 10601, Taiwan

6. Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan

7. Institute of Physics, Academia Sinica, Taipei 115201, Taiwan

Abstract

This work highlights the in-plane anisotropy of dark conductivity and photoconductivity in ReS2 nanoflakes. The naturally occurring surface electron accumulation (∼1019 cm−3) is over three orders of magnitude higher than the inner bulk values.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR04830F

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