Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging-Reference-Cited by-同舟云学术

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Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging

Published:2019 Issue:28 Volume:11 Page:13632-13638
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Rajak Piu¹²³⁴^ORCID,Islam Mahabul¹²³⁴⁵^ORCID,Jiménez J. J.⁶⁷⁸⁹¹⁰^ORCID,Mánuel J. M.⁶⁷⁸¹¹¹²^ORCID,Aseev P.¹³¹⁴¹⁵⁸,Gačević Ž.¹³¹⁴¹⁵⁸,Calleja E.¹³¹⁴¹⁵⁸,García R.⁶⁷⁸⁹¹⁰^ORCID,Morales Francisco M.⁶⁷⁸⁹¹⁰^ORCID,Bhattacharyya Somnath¹²³⁴^ORCID

Affiliation:

1. Department of Metallurgical and Materials Engineering

2. Indian Institute of Technology Madras

3. Chennai

4. India

5. Department of Physics

6. IMEYMAT: Institute of Research on Electron Microscopy and Materials

7. University of Cádiz

8. Spain

9. Department of Materials Science and Metallurgic Engineering

10. and Inorganic Chemistry

11. Department of Condensed Matter Physics

12. Faculty of Sciences

13. Instituto de Sistemas Optoelectrónicos y Microtecnología

14. Universidad Politécnica de Madrid

15. 28040 Madrid

Abstract

Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging.

Funder

Science and Engineering Research Board

Ministerio de Economía y Competitividad

Universidad de Cádiz

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR04146J

Reference50 articles.

1. Low-field electron mobility in wurtzite InN

2. Carrier mass measurements in degenerate indium nitride

3. Electron transport in wurtzite indium nitride

4. Investigation of violet InGaN laser diodes with normal and reversed polarizations

5. N-polar III-nitride quantum well light-emitting diodes with polarization-induced doping

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