Fe doping-stabilized γ-Ga2O3 thin films with a high room temperature saturation magnetic moment-Reference-Cited by-同舟云学术

Fe doping-stabilized γ-Ga2O3 thin films with a high room temperature saturation magnetic moment

Published:2020 Issue:2 Volume:8 Page:536-542
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Huang Yuanqi¹²³⁴⁵^ORCID,Gao Ang⁶⁷⁸⁹¹⁰,Guo Daoyou¹¹¹²¹³¹⁴⁵^ORCID,Lu Xia¹⁵¹⁶¹⁷⁵¹⁸^ORCID,Zhang Xiao¹²³⁴⁵,Huang Yalei¹¹¹²¹³¹⁴⁵,Yu Jie¹²³⁴⁵,Li Shan¹²³⁴⁵^ORCID,Li Peigang¹²³⁴⁵,Tang Weihua¹²³⁴⁵

Affiliation:

1. Laboratory of Information Functional Materials and Devices

2. School of Science

3. Beijing University of Posts and Telecommunications

4. Beijing 100876

5. China

6. Beijing National Laboratory for Condensed Matter Physics

7. Institute of Physics

8. Chinese Academy of Sciences

9. Beijing 100190

10. P. R. China

11. Center for Optoelectronics Materials and Devices

12. Department of Physics

13. Zhejiang Sci-Tech University

14. Hangzhou 310018

15. School of Materials

16. Sun Yat-sen University

17. Guangzhou 510275

18. Beijing Advanced Innovation Center for Soft Matter Science and Engineering

Abstract

A thermostable Fe-doped γ-Ga₂O₃ thin film with a high room temperature saturation magnetic moment of 5.73 μ_B/Fe has been obtained for the first time.

Funder

National Natural Science Foundation of China

Beijing Municipal Science and Technology Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC05823K

Reference87 articles.

1. First-principles theory of dilute magnetic semiconductors

2. A Systematic Study of Structural, Magneto-Electronic and Thermodynamic Properties of Mg1−xCrxSe DMS Alloys in the Rock–Salt Phase for Spintronic Applications