The graphene/n-Ge(110) interface: structure, doping, and electronic properties-Reference-Cited by-同舟云学术

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The graphene/n-Ge(110) interface: structure, doping, and electronic properties

Published:2018 Issue:13 Volume:10 Page:6088-6098
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Tesch Julia¹²³⁴,Paschke Fabian¹²³⁴,Fonin Mikhail¹²³⁴^ORCID,Wietstruk Marko⁵⁶⁴^ORCID,Böttcher Stefan⁵⁶⁴^ORCID,Koch Roland J.⁷⁸⁹¹⁰^ORCID,Bostwick Aaron⁷⁸⁹¹⁰,Jozwiak Chris⁷⁸⁹¹⁰^ORCID,Rotenberg Eli⁷⁸⁹¹⁰^ORCID,Makarova Anna¹¹¹²¹³⁴,Paulus Beate¹⁴¹⁵¹⁶⁴,Voloshina Elena¹⁷¹⁸¹⁹²⁰^ORCID,Dedkov Yuriy¹⁷¹⁸¹⁹²⁰²¹^ORCID

Affiliation:

1. Fachbereich Physik

2. Universität Konstanz

3. 78457 Konstanz

4. Germany

5. SPECS Surface Nano Analysis GmbH

6. 13355 Berlin

7. Advanced Light Source

8. E. O. Lawrence Berkeley National Laboratory

9. Berkeley

10. USA

11. Institut für Festkörperphysik

12. Technische Universität Dresden

13. 01062 Dresden

14. Institut für Chemie und Biochemie

15. Freie Universität Berlin

16. 14195 Berlin

17. Department of Physics and International Centre for Quantum and Molecular Structures

18. Shanghai University

19. 200444 Shanghai

20. China

21. Materials Genome Institute

Abstract

Synthesis temperature and substrate doping are key factors which determine the properties of graphene on semiconducting Ge(110).

Funder

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR00053K

Reference63 articles.

1. Growth of epitaxial graphene: Theory and experiment

2. Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer-Free Device Fabrication

3. Graphene and Graphene Analogs toward Optical, Electronic, Spintronic, Green-Chemical, Energy-Material, Sensing, and Medical Applications

4. Roll-to-roll production of 30-inch graphene films for transparent electrodes

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