Controlling the electronic and magnetic properties of the GeAs monolayer by generating Ge vacancies and doping with transition-metal atoms-Reference-Cited by-同舟云学术

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Controlling the electronic and magnetic properties of the GeAs monolayer by generating Ge vacancies and doping with transition-metal atoms

Published:2024 Issue:14 Volume:6 Page:3602-3611
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Hoat D. M.¹²^ORCID,Ponce-Pérez R.³,Ha Chu Viet⁴,Guerrero-Sanchez J.³

Affiliation:

1. Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam

2. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam

3. Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Baja California, Código Postal 22800, Mexico

4. Faculty of Physics, TNU-University of Education, Thai Nguyen, 250000, Vietnam

Abstract

Effects of vacancies and doping with transition metals on the electronic and magnetic properties of the GeAs monolayer are systematically investigated using first-principles calculations.

Funder

Universidad Nacional Autónoma de México

Trúóng Đại học Duy Tân

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NA/D4NA00235K

Reference59 articles.

1. Advances in nano-scaled biosensors for biomedical applications

2. The impact of nano-scaled materials on advanced metal–air battery systems

3. Computational study of GanAsm (m + n = 2–9) clusters using DFT calculations

4. On the doping of the Ga12As12 cluster with groups p and d atomic impurities

5. Electric Field Effect in Atomically Thin Carbon Films

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