Memristors mimicking the regulation of synaptic plasticity and the refractory period in the phenomenological model-Reference-Cited by-同舟云学术

Memristors mimicking the regulation of synaptic plasticity and the refractory period in the phenomenological model

Published:2020 Issue:15 Volume:8 Page:5183-5190
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yan Xiaobing¹²³⁴⁵^ORCID,Wang Gong¹²³⁴⁵,Zhao Jianhui¹²³⁴⁵,Zhou Zhenyu¹²³⁴⁵,Wang Hong¹²³⁴⁵,Zhang Lei¹²³⁴⁵,Wang Jingjuan¹²³⁴⁵,Li Xiaoyan¹²³⁴⁵,Pei Yifei¹²³⁴⁵,Qin Cuiya¹²³⁴⁵,Zhao Qianlong¹²³⁴⁵,Xiao Zuoao¹²³⁴⁵,Wang Kaiyang¹²³⁴⁵,Li Hui¹²³⁴⁵,Chen Jingsheng⁶⁷⁸⁹^ORCID

Affiliation:

1. National-Local joint engineering laboratory of new energy photovoltaic devices

2. Key Laboratory of Digital Medical Engineering of Hebei Province

3. College of Electron and Information Engineering

4. Hebei University

5. Baoding 071002

6. Department of Materials Science and Engineering

7. National University of Singapore

8. Singapore 117576

9. Singapore

Abstract

Herein, a new function in the phenomenological model, namely the principle of refractory period function, is developed based on a W/ZnO/FTO memristor device.

Funder

National Natural Science Foundation of China

Hebei University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC00575D

Reference44 articles.

1. A New Memristor with 2D Ti 3 C 2 T x MXene Flakes as an Artificial Bio‐Synapse

2. Probing the switching mechanism in ZnO nanoparticle memristors