Enhancing the thermoelectric performance of CexBi2S3 by optimizing the carrier concentration combined with band engineering-Reference-Cited by-同舟云学术

Enhancing the thermoelectric performance of CexBi2S3 by optimizing the carrier concentration combined with band engineering

Published:2017 Issue:47 Volume:5 Page:12492-12499
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Pei Jun¹²³⁴⁵,Zhang Li-Juan¹²³⁴⁵,Zhang Bo-Ping¹²³⁴⁵^ORCID,Shang Peng-Peng⁶⁷⁸⁵,Liu Yao-Chun¹²³⁴⁵

Affiliation:

1. The Beijing Municipal Key Laboratory of New Energy Materials and Technologies

2. School of Materials Science and Engineering

3. University of Science and Technology Beijing

4. Beijing

5. China

6. Department of Chemistry and Material Science

7. Shandong Agricultural University

8. Tai’an

Abstract

Bi₂S₃ is a promising low-cost thermoelectric material, but effective chemical modification is needed for its performance enhancement. Ce is an effective n-type doping element for Bi₂S₃ based materials owing to optimized carrier concentration and band engineering.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC04082B

Reference61 articles.

1. Convergence of electronic bands for high performance bulk thermoelectrics

2. Cooling, Heating, Generating Power, and Recovering Waste Heat with Thermoelectric Systems

3. Holey and Unholey Semiconductors