Crystal structures and electronic properties of Sn3N4 polymorphs synthesized via high-pressure nitridation of tin-Reference-Cited by-同舟云学术

Crystal structures and electronic properties of Sn3N4 polymorphs synthesized via high-pressure nitridation of tin

Published:2020 Issue:20 Volume:22 Page:3531-3538
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Niwa Ken¹²³⁴^ORCID,Inagaki Tomoya¹²³⁴,Ohsuna Tetsu¹²³⁴^ORCID,Liu Zheng⁵³⁴^ORCID,Sasaki Takuya¹²³⁴^ORCID,Gaida Nico Alexander¹²³⁴^ORCID,Hasegawa Masashi¹²³⁴

Affiliation:

1. Department of Materials Physics

2. Nagoya University

3. Nagoya

4. Japan

5. National Institute of Advanced Industrial Science and Technology

Abstract

Sn₃N₄ polymorphs were synthesized via high-pressure nitridation of tin by means of laser-heated diamond anvil cell technique. This implies new insight into the crystal chemistry and functional materials of group IVA nitrides.

Funder

Japan Society for the Promotion of Science

National Institute of Advanced Industrial Science and Technology

Nagoya University

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CE/D0CE00210K

Reference63 articles.

1. Crystal Structures of Silicon Nitride

2. Structure of the Nitrides of Silicon and Germanium

3. On the crystal structure of the nitrides of silicon and germanium

4. Relationships between processing, microstructure and properties of dense and reaction-bonded silicon nitride

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mixed Tin Valence in the Tin(II/IV)‐Nitridophosphate Sn₃P₈N₁₆;Chemistry – A European Journal;2024-06-25

2. Synthesis of tin(IV) nitride with spinel structure, γ -Sn ₃ N ₄ , from the elements and its Raman-spectroscopic examination at high pressures;Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences;2023-08-28