Composition control of conformal crystalline GeSbTe films by atomic layer deposition supercycles and tellurization annealing-Reference-Cited by-同舟云学术

Composition control of conformal crystalline GeSbTe films by atomic layer deposition supercycles and tellurization annealing

Published:2022 Issue:26 Volume:10 Page:9691-9698
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Yewon¹^ORCID,Kim Kwonyoung¹,Kim Okhyeon¹^ORCID,Park Chang Yup²,Koo Dong Geon²,Ahn Dong-Ho²,Kuh Bong Jin²,Lee Won-Jun¹^ORCID

Affiliation:

1. Departments of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea

2. Process Development, Semiconductor R&D Center, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, Republic of Korea

Abstract

Considering the three-dimensional vertical phase-change random access memory device application, we studied the deposition process to prepare conformal crystalline GeSbTe thin films.

Funder

Samsung

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC00784C

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3. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

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Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth Mechanism of Ge2Sb2Te5 Thin Films by Atomic Layer Deposition Supercycles of GeTe and SbTe;Surfaces and Interfaces;2024-09

2. Correction: Composition control of conformal crystalline GeSbTe films by atomic layer deposition supercycles and tellurization annealing;Journal of Materials Chemistry C;2022