N-type and p-type molecular doping on monolayer MoS2-Reference-Cited by-同舟云学术

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N-type and p-type molecular doping on monolayer MoS2

Published:2021 Issue:14 Volume:11 Page:8033-8041
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Le Ong Kim¹²³⁴²,Chihaia Viorel⁵⁶⁷^ORCID,Van On Vo⁸⁹¹⁰³,Son Do Ngoc¹²³⁴²^ORCID

Affiliation:

1. Ho Chi Minh City University of Technology (HCMUT)

2. Ho Chi Minh City

3. Vietnam

4. Vietnam National University

5. Institute of Physical Chemistry “Ilie Murgulescu” of the Romanian Academy

6. 060021 Bucharest

7. Romania

8. Institute of Applied Technology

9. Thu Dau Mot University

10. Thu Dau Mot City

Abstract

Pressure controls electronic and optical properties of monolayer MoS₂ with organic molecular adsorption.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/RA/D0RA10075G

Reference37 articles.

1. Single-layer MoS2 transistors

2. Emerging Photoluminescence in Monolayer MoS2

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

5. Tuning electronic and optical properties of MoS2monolayer via molecular charge transfer

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