Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon-Reference-Cited by-同舟云学术

Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon

Published:2022 Issue:7 Volume:14 Page:2826-2836
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wang Mao¹^ORCID,Yu Ye²^ORCID,Prucnal Slawomir¹^ORCID,Berencén Yonder¹^ORCID,Shaikh Mohd Saif¹^ORCID,Rebohle Lars¹^ORCID,Khan Muhammad Bilal¹^ORCID,Zviagin Vitaly³,Hübner René¹^ORCID,Pashkin Alexej¹^ORCID,Erbe Artur¹⁴^ORCID,Georgiev Yordan M.¹⁵^ORCID,Grundmann Marius³^ORCID,Helm Manfred¹⁶,Kirchner Robert²⁴,Zhou Shengqiang¹^ORCID

Affiliation:

1. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany

2. Institute of Semiconductors and Microsystems, Technische Universität Dresden, 01062 Dresden, Germany

3. Felix-Bloch-Institut für Festkörperphysik, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany

4. Centre for Advancing Electronics Dresden (CfAED), Technische Universität Dresden, 01062 Dresden, Germany

5. Institute of Electronics at the Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria

6. Institut für Angewandte Physik (IAP), Technische Universität Dresden, 01062 Dresden, Germany

Abstract

The mid-infrared localized surface plasmon resonances are realized in hyperdoped Si and can be spectrally tuned by fabricating nano-antenna arrays. Our results are promising for the integration of plasmonic sensors into the on-chip CMOS platform.

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D1NR07274A

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