Addressable surface engineering for N-doped WS2 nanosheet arrays with abundant active sites and the optimal local electronic structure for enhanced hydrogen evolution reaction-Reference-Cited by-同舟云学术

Addressable surface engineering for N-doped WS2 nanosheet arrays with abundant active sites and the optimal local electronic structure for enhanced hydrogen evolution reaction

Published:2020 Issue:44 Volume:12 Page:22541-22550
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Wang Haiqing¹²³⁴,Xu Zhongfei⁵⁶⁴,Zhang Zengfu¹²³⁴,Hu Shuxian⁵⁶⁴^ORCID,Ma Mingjun¹²³⁴,Zhang Zhicheng⁷⁸⁹¹⁰¹¹^ORCID,Zhou Weijia¹²³⁴,Liu Hong¹²³⁴¹²^ORCID

Affiliation:

1. Institute for Advanced Interdisciplinary Research (iAIR)

2. University of Jinan

3. Jinan

4. China

5. Beijing Computational Science Research Center

6. Beijing 100193

7. Tianjin Key Laboratory of Molecular Optoelectronic Sciences

8. Department of Chemistry

9. School of Science

10. Tianjin University

11. Tianjin 300072

12. State Key Laboratory of Crystal Materials

Abstract

Engineering an addressable surface endows N doped WS₂ nanosheet arrays with abundant active sites and an optimal local electronic structure for enhanced hydrogen evolution reaction.

Funder

National Key Research and Development Program of China

Natural Science Foundation of Shandong Province

Foundation of President of China Academy of Engineering Physics

National Natural Science Foundation of China

University of Jinan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR06354A