Retraction: Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability-Reference-Cited by-同舟云学术

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Retraction: Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability

Published:2023 Issue:11 Volume:10 Page:5313-5313
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Jung Sung Hyeon¹,Yang Ji Sook¹,Kim Young Been¹,Deshpande Nishad G.²,Kim Dong Su¹,Choi Ji Hoon¹,Suh Hee Won¹,Lee Hak Hyeon¹,Cho Hyung Koun¹³

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea

2. Indian Institute of Information Technology Surat, 395007, India

3. Research Center for Advanced Materials Technology, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 16419, Republic of Korea

Abstract

Retraction of ‘Progressive p-channel vertical transistors fabricated using electrodeposited copper oxide designed with grain boundary tunability’ by Sung Hyeon Jung et al., Mater. Horiz., 2022, 9, 1010–1022, https://doi.org/10.1039/D1MH01568K.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MH/D3MH90059B

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