Electronic structure regulation of an ultra-thin MOF-derived NiSe2/NiS2@NC heterojunction for promoting the hydrogen evolution reaction-Reference-Cited by-同舟云学术

Electronic structure regulation of an ultra-thin MOF-derived NiSe2/NiS2@NC heterojunction for promoting the hydrogen evolution reaction

Published:2022 Issue: Volume: Page:
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Lu Kebin¹,Sun Jianpeng¹,Xu Huakai¹,Jiang Chuanhai¹,Jiang Weifeng¹,Dai Fangna¹^ORCID,Wang Hong²,Hao Hongguo³

Affiliation:

1. College of Science, School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, Shandong, 266580, P. R. China

2. A College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing, P. R. China

3. Shandong Provincial Key Laboratory of Chemical Energy Storage and Novel Cell Technology, School of Chemistry and Chemical Engineering, Liaocheng University, Liaocheng 252059, China

Abstract

A Ni-MOF is used as a precursor to synthesize a NiSe2/NiS2@NC heterojunction with rich phase interfaces through a selenization/sulfurization process. Overpotentials of 188 mV and 211 mV are achieved in acidic and alkaline media at 10 mA cm−2.

Funder

National Natural Science Foundation of China

Fundamental Research Funds for the Central Universities

China University of Petroleum, Beijing

Liaocheng University

Natural Science Foundation of Shandong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2022/MA/D1MA01168E