Silicon-based two-dimensional chalcogenide of p-type semiconducting silicon telluride nanosheets for ultrahigh sensitive photodetector applications-Reference-Cited by-同舟云学术

Silicon-based two-dimensional chalcogenide of p-type semiconducting silicon telluride nanosheets for ultrahigh sensitive photodetector applications

Published:2021 Issue:32 Volume:9 Page:10478-10486
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lin Chang-Yu¹^ORCID,Ulaganathan Rajesh Kumar²³^ORCID,Sankar Raman⁴^ORCID,Murugesan Raghavan Chinnambedu⁵,Subramanian Ambika¹,Rozhin Alex⁵,Firdoz Shaik⁶^ORCID

Affiliation:

1. Department of Mechanical Engineering, Chung Yuan Christian University, Taoyuan-32023, Taiwan

2. Center for Condensed Matter Sciences, National Taiwan University, Taipei-10617, Taiwan

3. Department of Photonics Engineering, Technical University of Denmark, Roskilde-4000, Denmark

4. Institute of Physics, Academia Sinica, Taipei-11529, Taiwan

5. Aston Institute of Photonic Technologies, Aston University, Birmingham-B4 7ET, UK

6. Schulich Faculty of Chemistry, Technion-Israel Institute of Technology, Haifa-32000, Israel

Abstract

We demonstrate an outstanding visible light photodetector fabricated with high-quality 2D silicon telluride single crystal grown by chemical vapor transport technique.

Funder

Academia Sinica

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC02129J

Reference57 articles.

1. Progress and Prospects in Transition-Metal Dichalcogenide Research Beyond 2D

2. Graphene-based composite materials