Structural and luminescence properties of Eu and Er implanted Bi2O3 nanowires for optoelectronic applications-Reference-Cited by-同舟云学术

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Structural and luminescence properties of Eu and Er implanted Bi2O3 nanowires for optoelectronic applications

Published:2013 Issue:47 Volume:1 Page:7920
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Vila María,Díaz-Guerra Carlos,Lorenz Katharina,Piqueras Javier,Alves Eduardo,Nappini Silvia,Magnano Elena

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2013/TC/C3TC31989J

Reference56 articles.

1. Remote p-Doping of InAs Nanowires

2. The Promise and Perils of Wide-Bandgap Semiconductor Nanowires for Sensing, Electronic, and Photonic Applications

3. Precursor evaluation forin situInP nanowire doping

4. Rare Earth Doped Zinc Oxide Nanowires

5. Ion beam doping of semiconductor nanowires

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2. Spectroscopic Evidence of Localized Small Polarons in Low-Dimensional Ionic Liquid Lead-Free Hybrid Perovskites;ACS Applied Materials & Interfaces;2023-11-15

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4. Selective formation of crystal polymorphs in Er3+-doped Bi2O3 thin films and their photoluminescence properties;Ceramics International;2023-03

5. Er3+-catalyzed interdiffusion of elements across the interface between Bi2O3 film and SiO2 substrate resulting in host-material-specific photoluminescence spectra of Er3+;Journal of Alloys and Compounds;2022-05

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