Rhodium-embedded UV photodetectors based on localized surface plasmon resonance on AlN/GaN-Reference-Cited by-同舟云学术

Rhodium-embedded UV photodetectors based on localized surface plasmon resonance on AlN/GaN

Published:2023 Issue:22 Volume:15 Page:9684-9690
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Hu Xun¹²,Chen Baiyi¹²,Huang Changfeng¹,Qiu Hongwei¹,Gao Na¹²^ORCID,Wu Yaping¹^ORCID,Cai Duanjun¹^ORCID,Huang Kai¹,Kang Junyong¹,Zhang Rong¹

Affiliation:

1. Fujian Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, P. R. China

2. Jiujiang Research Institute of Xiamen University, Jiujiang 332000, P. R. China

Abstract

We report a remarkably enhanced responsivity of metal–semiconductor–metal photodetectors embedded with a large-scale periodicity and highly uniform rhodium nanoparticle array based on localized surface plasmon resonance.

Funder

National Key Research and Development Program of China

Natural Science Foundation of Jiangxi Province

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR00358B

Reference34 articles.

1. Strain engineering of digitally alloyed AlN/GaN nanorods for far-UVC emission as short as 220 nm

2. Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

3. Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction

4. Self-Powered Ultraviolet Photodetectors Driven by Built-In Electric Field

5. Epitaxial Growth of 2D Ultrathin Metastable γ‐Bi 2 O 3 Flakes for High Performance Ultraviolet Photodetection

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