Transparent photodetectors based on polyoxometalate modified electrospun ZnO homojunction nanowire intersection arrays-Reference-Cited by-同舟云学术

Transparent photodetectors based on polyoxometalate modified electrospun ZnO homojunction nanowire intersection arrays

Published:2022 Issue:1 Volume:6 Page:15-23
ISSN:2052-1537
Container-title:Materials Chemistry Frontiers
language:en
Short-container-title:Mater. Chem. Front.

Author:

Zheng Yuxiao¹,Xu Xueying¹,Li Fengrui¹,Chen Weilin¹^ORCID,Gong Jian¹^ORCID,Wang Chunlei²

Affiliation:

1. Key Laboratory of Polyoxometalate and Reticular Material Chemistry of Ministry of Education, Faculty of Chemistry, Northeast Normal University, Changchun, 130024, China

2. Library of Northeast Normal University, Changchun, 130024, China

Abstract

We use electrospinning to modify ZnO NWs with POMs. The composite exhibits the features of a p-type semiconductor and matches the Eg of ZnO. The PDs prepared by POMs@ZnO NWs can work under zero bias conditions and show good light responsivity.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jilin Province

Education Department of Jilin Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/QM/D1QM01246K

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1. Light-modulated vertical heterojunction phototransistors with distinct logical photocurrents