Facile patterning using dry film photo-resists for flexible electronics: Ag nanowire networks and carbon nanotube networks-Reference-Cited by-同舟云学术

Facile patterning using dry film photo-resists for flexible electronics: Ag nanowire networks and carbon nanotube networks

Published:2017 Issue:19 Volume:5 Page:4804-4809
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

An Chee-Hong¹²³⁴,Kim Sunho¹²³⁴,Lee Hoo-Jeong¹²³⁴,Hwang Byungil⁵³⁴^ORCID

Affiliation:

1. School of Advanced Materials and Engineering

2. Sungkyunkwan University

3. Suwon

4. Republic of Korea

5. BASF Electronic Materials R&D Center Asia

Abstract

The Ag nanowire and CNT networks are patterned with a pattern width up to 30 μm by using dry film photo resists (DFRs). The systematic characterization of the electrical and mechanical properties of the patterned Ag nanowire networks revealed pattern width dependent property changes.

Funder

Ministry of Knowledge Economy

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC00885F

Reference25 articles.

1. Highly efficient and low voltage silver nanowire-based OLEDs employing a n-type hole injection layer

2. Highly Flexible Silver Nanowire Electrodes for Shape-Memory Polymer Light-Emitting Diodes

3. Silver Nanowire Top Electrodes in Flexible Perovskite Solar Cells using Titanium Metal as Substrate