Structural and electronic properties of defects at grain boundaries in CuInSe2-Reference-Cited by-同舟云学术

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Structural and electronic properties of defects at grain boundaries in CuInSe2

Published:2017 Issue:22 Volume:19 Page:14770-14780
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Saniz R.¹²³⁴⁵^ORCID,Bekaert J.¹²³⁴⁵,Partoens B.¹²³⁴⁵,Lamoen D.⁶²³⁴⁵

Affiliation:

1. CMT

2. Departement Fysica

3. Universiteit Antwerpen

4. Groenenborgerlaan 171

5. B-2020 Antwerpen

6. EMAT

Abstract

Octet rule violation near the grain boundary plane is common in Σ3 grain boundaries, with important structural and electronic implications.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C7CP02033C

Reference49 articles.

1. Effects of heavy alkali elements in Cu(In,Ga)Se 2 solar cells with efficiencies up to 22.6%

2. The electronic structure of chalcopyrites-bands, point defects and grain boundaries

3. Stability of Cu(In,Ga)Se 2 solar cells: A literature review

4. Recent developments in the synthesis of nanostructured chalcopyrite materials and their applications: a review

5. Grain boundaries in Cu(In, Ga)(Se, S)2 thin-film solar cells

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1. Effect of defect on the properties of the CuInSe2 compound;Applied Physics A;2024-09-12

2. Atomistic models of In and Ga diffusion in Cu(In,Ga)Se2;Journal of Applied Physics;2023-09-18

3. Effect of crystal growth conditions on carrier lifetime and lattice defects in the solar absorber material ZnSnP2;Journal of Applied Physics;2023-06-15

4. Defect engineering of ternary Cu–In–Se quantum dots for boosting photoelectrochemical hydrogen generation;Carbon Energy;2023-05-17

5. Adjusting Cu layer thickness of ITO/Cu/ITO film to improve electrochemical corrosion of GOA unit;Journal of Alloys and Compounds;2023-03

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