Fabrication of strontium included hafnium oxide thin film based Al/Sr:HfO2/n-Si MIS-Schottky barrier diodes for tuned electrical behavior-Reference-Cited by-同舟云学术

Fabrication of strontium included hafnium oxide thin film based Al/Sr:HfO2/n-Si MIS-Schottky barrier diodes for tuned electrical behavior

Published:2021 Issue:41 Volume:45 Page:19476-19486
ISSN:1144-0546
Container-title:New Journal of Chemistry
language:en
Short-container-title:New J. Chem.

Author:

Harishsenthil P.¹,Chandrasekaran J.¹^ORCID,Thangaraju D.²^ORCID,Balasubramani V.¹³

Affiliation:

1. Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore 641 020, India

2. Nano-crystal Design & Application Lab (n-DAL), Department of Physics, PSG Institute of Technology and Applied Research, Coimbatore-641 020, Tamil Nadu, India

3. Centre for Clean Energy and Nano Convergence, Hindustan Institute of Technology and Science, Chennai-603 103, Tamil Nadu, India

Abstract

Synthesis of Sr included HfO2 for fabrication of a Schottky barrier diode.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NJ/D1NJ03563K

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