Diffusion induced effects on geometry of Ge nanowires-Reference-Cited by-同舟云学术

Diffusion induced effects on geometry of Ge nanowires

Published:2014 Issue:13 Volume:6 Page:7469-7473
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Rezvani S. J.¹²³⁴⁵,Pinto N.¹²³⁶⁷,Boarino L.⁴⁵⁸,Celegato F.⁴⁵⁸,Favre L.⁹¹⁰¹¹,Berbezier I.⁹¹⁰¹¹

Affiliation:

1. School of Science and Technology

2. University of Camerino

3. I-62032 Camerino, Italy

4. Istituto Nazionale di Ricerca Metrologica

5. INRiM

6. INFN

7. Sezione di Perugia

8. I-10135 Torino, Italy

9. IM2NP-UMR CNRS

10. Aix-Marseille Université

11. France

Abstract

We report the geometry modifications of VLS grown Ge nanowires resulting from a change in adatoms' diffusion length and direction, caused by the deposition flux.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR01084A

Reference40 articles.

1. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

2. Silicon nanowire solar cells

3. Integratable Nanowire Transistors

4. High Performance Silicon Nanowire Field Effect Transistors

5. Nanowire Crossbar Arrays as Address Decoders for Integrated Nanosystems

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Aluminum-Activated Borophene Nanosheets with Enhanced Oxidation Resistance for Nanoelectronic Devices;ACS Applied Nano Materials;2024-05-23

2. Porous silicon nanowires phase transformations at high temperatures and pressures;Applied Physics Letters;2021-08-02

3. Spontaneous shape transition of MnxGe1−x islands to long nanowires;Beilstein Journal of Nanotechnology;2021-04-28

4. Structural Properties of Porous Silicon Nanowires: A Combined Characterization by Advanced Spectroscopic Techniques;Synchrotron Radiation Science and Applications;2021

5. Engineering Porous Silicon Nanowires with Tuneable Electronic Properties;Condensed Matter;2020-09-28