Ultra-narrow-bandgap thienoisoindigo polymers: structure–property correlations in field-effect transistors-Reference-Cited by-同舟云学术

Ultra-narrow-bandgap thienoisoindigo polymers: structure–property correlations in field-effect transistors

Published:2016 Issue:40 Volume:4 Page:9554-9560
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Gyoungsik¹²³⁴⁵,Kim Hyoeun⁶⁷⁸⁹,Jang Moonjeong¹²³⁴⁵,Jung Yun Kyung¹²³⁴⁵,Oh Joon Hak⁶⁷⁸⁹,Yang Changduk¹²³⁴⁵

Affiliation:

1. Department of Energy Engineering

2. School of Energy and Chemical Engineering

3. Low Dimensional Carbon Materials Center

4. Ulsan National Institute of Science and Technology (UNIST)

5. Ulsan 44919

6. Department of Chemical Engineering

7. Pohang University of Science and Technology (POSTECH)

8. Pohang

9. South Korea

Abstract

A systematic study on the microstructure-property relationship in thienoisoindigo (TIIG)-based polymers provides the guidance for the synthesis of high-performance polymers by tuning the polarity of charge carrier in organic field-effect transistors (OFETs).

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC03693G

Reference48 articles.

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2. A high-mobility electron-transporting polymer for printed transistors

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5. Roll-to-Roll fabrication of large area functional organic materials

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