Carrier-filtering and phonon-blocking AgSnSe2-decorated grain boundaries to boost the thermoelectric performance of Cu2Sn0.9Co0.1S3-Reference-Cited by-同舟云学术

Carrier-filtering and phonon-blocking AgSnSe₂-decorated grain boundaries to boost the thermoelectric performance of Cu₂Sn_0.9Co_0.1S₃

Published:2023 Issue:4 Volume:15 Page:1695-1701
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Chen Jiaxin¹,Gu Yan¹,Zhou Haitao¹,Pan Lin¹,Wang Yifeng¹²^ORCID,Wan Chunlei³^ORCID,He Shengping⁴

Affiliation:

1. College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China

2. Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 210009, China

3. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China

4. Sino-Foundry Refractory (Jiangsu) Co., Ltd, Zhenjiang 212114, China

Abstract

Thermoelectric performance of Cu2Sn0.9Co0.1S3 was enhanced by synergic effects of electron ionized impurity scattering and phonon blocking due to the AgSnSe2-decorated grain boundaries, with a ZTmax of 0.93 at 773 K in Cu2Sn0.9Co0.1S3–3 wt% AgSnSe2.

Funder

National Key Research and Development Program of China

Priority Academic Program Development of Jiangsu Higher Education Institutions

Nanjing Tech University

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR05699B