Electronic and optical properties of two-dimensional heterostructures and heterojunctions between doped-graphene and C- and N-containing materials-Reference-Cited by-同舟云学术

Electronic and optical properties of two-dimensional heterostructures and heterojunctions between doped-graphene and C- and N-containing materials

Published:2021 Issue:8 Volume:23 Page:4865-4873
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Bafekry Asadollah¹²³⁴⁵^ORCID,Gogova Daniela⁵⁶⁷⁸,M. Fadlallah Mohamed⁹¹⁰¹¹^ORCID,V. Chuong Nguyen¹²¹³¹⁴¹⁵^ORCID,Ghergherehchi Mitra¹⁶¹⁷¹⁸¹⁹,Faraji Mehrdad²⁰²¹²²²³²⁴,Feghhi Seyed Amir Hossein¹²³⁴,Oskoeian Mohamad⁵²⁵⁴

Affiliation:

1. Department of Radiation Application

2. Shahid Beheshti University

3. Tehran

4. Iran

5. Department of Physics

6. University of Oslo

7. Blindern

8. Norway

9. Department of Physics, Faculty of Science, Benha University

10. 13518 Benha

11. Egypt

12. Department of Materials Science and Engineering

13. Le Quy Don Technical University

14. Hanoi 100000

15. Vietnam

16. College of Electronic and Electrical Engineering

17. Sungkyunkwan University

18. Suwon

19. Korea

20. Micro and Nanotechnology Graduate Program

21. TOBB University of Economics and Technology

22. Sogutozu Caddesi No 43 Sogutozu

23. Ankara

24. Turkey

25. University of Guilan

Abstract

The electronic and optical properties of vertical heterostructures (HTSs) and lateral heterojunctions (HTJs) between (B,N)-codoped graphene (dop@Gr) and graphene (Gr), C₃N, BC₃ and h-BN monolayers are investigated using van der Waals density functional theory calculations.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CP/D0CP06213H

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2. Structure and properties of phosphorene-like IV-VI 2D materials

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor