Collisional quenching of electronically excited silicon atoms, Si[3p 2(1 D 2)], by atomic absorption spectroscopy-Reference-Cited by-同舟云学术

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Collisional quenching of electronically excited silicon atoms, Si[3p 2(1 D 2)], by atomic absorption spectroscopy

Published:1978 Issue: Volume:74 Page:1483
ISSN:0300-9238
Container-title:Journal of the Chemical Society, Faraday Transactions 2
language:en
Short-container-title:J. Chem. Soc., Faraday Trans. 2

Author:

Husain David,Norris Peter E.

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/1978/F2/F29787401483

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Reaction dynamics of Si(PJ3)+O2→SiO(XΣ+1)+O studied by a crossed-beam laser-induced fluorescence technique;The Journal of Chemical Physics;2008-02-28

4. Kinetic Study for the Reactions of Si Atoms with SiH4;The Journal of Physical Chemistry A;2003-05-24

5. The Collisional Quenching of Electronically Excited Germanium Atoms, Ge[4p2(1S0)], with Olefins and Acetylenes Investigated by Time-resolved Atomic Resonance Absorption Spectroscopy;Zeitschrift für Physikalische Chemie;1998-01-01

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