High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride-Reference-Cited by-同舟云学术

High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride

Published:2018 Issue:12 Volume:10 Page:5559-5565
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Liu Heng¹²³⁴⁵,Meng Junhua¹²³⁴⁵,Zhang Xingwang¹²³⁴⁵^ORCID,Chen Yanan¹²³⁴⁵,Yin Zhigang¹²³⁴⁵,Wang Denggui¹²³⁴⁵,Wang Ye¹²³⁴⁵,You Jingbi¹²³⁴⁵,Gao Menglei¹²³⁴⁵,Jin Peng¹²³⁴⁵

Affiliation:

1. Key Lab of Semiconductor Materials Science

2. Institute of Semiconductors

3. Chinese Academy of Sciences

4. Beijing

5. P. R. China

Abstract

The deep ultraviolet photodetectors based on 2D h-BN show a high on/off ratio of >10³ and good spectral selectivity.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C7NR09438H

Reference45 articles.

1. Semiconductor ultraviolet detectors

2. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

3. High-Performance Solar-Blind Deep Ultraviolet Photodetector Based on Individual Single-Crystalline Zn2GeO4Nanowire

4. High-quality visible-blind AlGaN p-i-n photodiodes

5. 200nm deep ultraviolet photodetectors based on AlN

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