Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film-Reference-Cited by-同舟云学术

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Effect of Sb content on anisotropic magnetoresistance in a (Ga, Mn)(As, Sb) ferromagnetic semiconductor thin film

Published:2019 Issue:19 Volume:9 Page:10776-10780
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wang Wenjie¹²³⁴^ORCID,Chen Jing¹²³⁴^ORCID,Deng Jiajun¹²³⁴,Che Jiantao¹²³⁴,Hu Bing¹²³⁴,Cheng Xin¹²³⁴

Affiliation:

1. Mathematics and Physics Department

2. North China Electric Power University

3. Beijing 102206

4. China

Abstract

The effect of Sb content on the in-plane anisotropic magnetoresistance (AMR) of the quaternary ferromagnetic semiconductor (Ga, Mn)(As, Sb) was investigated.

Funder

National Natural Science Foundation of China

Beijing Higher Education Young Elite Teacher Project

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C8RA10256B

Reference26 articles.

1. Transport properties and origin of ferromagnetism in (Ga,Mn)As

2. Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field

3. A ferromagnetic III–V semiconductor: (Ga,Mn)As

4. Dc-transport properties of ferromagnetic (Ga,Mn)As semiconductors

5. Temperature dependent magnetic anisotropy in (Ga,Mn)As layers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anisotropic magnetoresistance: materials, models and applications;Royal Society Open Science;2023-10

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