Recent progress in physically transient resistive switching memory-Reference-Cited by-同舟云学术

Recent progress in physically transient resistive switching memory

Published:2020 Issue:42 Volume:8 Page:14695-14710
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hu Wei¹²³⁴⁵^ORCID,Yang Ben¹²³⁴⁵,Zhang Yanming¹²³⁴⁵,She Yin¹²³⁴⁵

Affiliation:

1. Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China

2. College of Optoelectronic Engineering

3. Chongqing University

4. Chongqing 400044

5. China

Abstract

Advances in physically transient resistive switching memory with a focus on materials, fabrication, performance, mechanism, and application are presented.

Funder

Chongqing Research Program of Basic Research and Frontier Technology

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC03668D

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