Recent progress in physically transient resistive switching memory

Author:

Hu Wei12345ORCID,Yang Ben12345,Zhang Yanming12345,She Yin12345

Affiliation:

1. Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China

2. College of Optoelectronic Engineering

3. Chongqing University

4. Chongqing 400044

5. China

Abstract

Advances in physically transient resistive switching memory with a focus on materials, fabrication, performance, mechanism, and application are presented.

Funder

Chongqing Research Program of Basic Research and Frontier Technology

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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