Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response-Reference-Cited by-同舟云学术

Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response

Published:2015 Issue:27 Volume:3 Page:7022-7028
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Feng Wei¹²³⁴⁵,Wu Jing-Bin⁶⁷⁸⁹⁴,Li Xiaoli⁶⁷⁸⁹⁴,Zheng Wei¹²³⁴,Zhou Xin¹⁰²³¹¹,Xiao Kai¹²¹³¹⁴¹⁵,Cao Wenwu¹⁶²¹⁷⁴,Yang Bin¹⁶²¹⁷⁴,Idrobo Juan-Carlos¹²¹³¹⁴¹⁵,Basile Leonardo¹²¹³¹⁴¹⁵,Tian Weiquan¹⁰²³¹¹,Tan PingHeng⁶⁷⁸⁹⁴,Hu PingAn¹²³⁴

Affiliation:

1. Key Lab of Microsystem and Microstructure of Ministry of Education

2. Harbin Institute of Technology

3. Harbin

4. China

5. School of Materials Science and Engineering

6. State Key Laboratory of Super lattices and Microstructures

7. Institute of Semiconductors

8. Chinese Academy of Sciences

9. Beijing 100083

10. State Key Laboratory of Urban Water Resource and Environment

11. People's Republic of China

12. Center for Nano phase Materials Sciences

13. Oak Ridge National Laboratory

14. TN 37831

15. USA

16. Condensed Matter Science and Technology Institute

17. Harbin 150080

Abstract

Thickness dependent photon adsorption and phototransistors of multilayer InSe nanosheets have been demonstrated. Phototransistors based on InSe show a broad spectral response and ultrahigh photoresponsivity and detectiviy.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC01208B

Reference34 articles.

1. Third-generation infrared photodetector arrays

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