Enhancing the thermoelectric performance of Sb2Si2Te6 by germanium doping

Author:

Wang Weihua12,Lu Xiaowei1,Sun Lin1,Luo Jipeng3ORCID,Shi Quan3ORCID,Ta Na1,Jiang Peng13ORCID,Bao Xinhe13ORCID

Affiliation:

1. State Key Laboratory of Catalysis, CAS Center for Excellence in Nanoscience, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, Liaoning, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, Liaoning, China

Abstract

Ge-doped Si2Sb2Te6 with a high power factor is promising for intermediate-temperature thermoelectric devices with high output power density and conversion efficiency.

Funder

Dalian Institute of Chemical Physics

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

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