Controlling the Dirac point voltage of graphene by mechanically bending the ferroelectric gate of a graphene field effect transistor-Reference-Cited by-同舟云学术

Controlling the Dirac point voltage of graphene by mechanically bending the ferroelectric gate of a graphene field effect transistor

Published:2019 Issue:2 Volume:6 Page:302-310
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Hu Guangliang¹²³⁴⁵,Wu Jingying⁵²³⁴,Ma Chunrui¹²³⁴^ORCID,Liang Zhongshuai⁵²³⁴,Liu Weihua⁵²³⁴,Liu Ming⁵²³⁴,Wu Judy Z.⁶⁷⁸⁹¹⁰,Jia Chun-Lin⁵²³⁴¹¹

Affiliation:

1. State Key Laboratory for Mechanical Behavior of Materials

2. Xi’an Jiaotong University

3. Xi’an 710049

4. China

5. School of Electronic and Information Engineering

6. Department of Physics and Astronomy

7. University of Kansas

8. Lawrence

9. Kanas

10. USA

11. Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons

Abstract

The linear shift in V_Dirac of a flexible GFET, caused by the flexoelectric effect of a PLZT gate, makes it enormously useful for both tuning the graphene doping state and detecting bending curvature.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

National Science Foundation

Army Research Office

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2019/MH/C8MH01499J

Reference29 articles.

1. Graphene: An Emerging Electronic Material

2. Graphene: Status and Prospects

3. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

4. Ammonia gas sensing using a graphene field–effect transistor gated by ionic liquid

5. High-Sensitivity Light Detection via Gate Tuning of Organometallic Perovskite/PCBM Bulk Heterojunctions on Ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 Gated Graphene Field Effect Transistors

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