Lead-free layered Aurivillius-type Sn-based halide perovskite Ba2X2[Csn−1SnnX3n+1] (X = I/Br/Cl) with an optimal band gap of ∼1.26 eV and theoretical efficiency beyond 27% for photovoltaics

Author:

Liu Shi-ming1,Zhong Hong-xia2ORCID,Liang Jun-jie3,Zhang Min4,Zhu Yao-hui5ORCID,Du Juan1,Guo Wen-hui1,He Yong1ORCID,Wang Xinqiang1,Shi Jun-jie1ORCID

Affiliation:

1. State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China

2. School of Mathematics and Physics, China University of Geosciences, Wuhan, 430074, China

3. International Center for Quantum Materials, Peking University, Beijing, 100871, China

4. Inner Mongolia Key Laboratory for Physics and Chemistry of Functional Materials, College of Physics and Electronic Information, Inner Mongolia Normal University, Hohhot, 010022, China

5. Physics Department, Beijing Technology and Business University, Beijing, 100048, China

Abstract

The layered Sn-based perovskite Ba2Br2[Cs2Sn3Br10] with excellent photovoltaic properties is found. It has a bandgap of 1.26 eV and a large optical absorption and carrier mobility. The Ba2Br2[Cs2Sn3Br10]-based solar cell has a high theoretical PCE of 27.7%.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Beijing Municipal Science and Technology Commission

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

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