Toward flexible memory application: high-performance phase-change magnetic material Fe:GeTe films realized <i>via</i> quasi-van der Waals epitaxy-Reference-Cited by-同舟云学术

Toward flexible memory application: high-performance phase-change magnetic material Fe:GeTe films realized via quasi-van der Waals epitaxy

Published:2022 Issue:26 Volume:10 Page:9891-9901
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Liu Jindong¹^ORCID

Affiliation:

1. School of Opto-Electronic Information Science and Technology, Yantai University, Yantai, 264005, China

Abstract

The flexible Fe:GeTe films realized via Q-vdWE exhibit excellent pliability, robust mechanical durability, stable ferromagnetism, superior cycling endurance, and good signal repetition, indicating great potentials for flexible electronics.

Funder

National Natural Science Foundation of China

Yantai University

Natural Science Foundation of Jiangsu Province

China Postdoctoral Science Foundation

Postdoctoral Science Foundation of Jiangsu Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC01989B

Reference68 articles.

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5. Cohesive and adhesive properties of ultrathin amorphous and crystalline Ge2Sb2Te5 films on polyimide substrates

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