Microstructure of oxygen-deficient annealing-induced non-polar ZnO films with extremely low electrical resistivity-Reference-Cited by-同舟云学术

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Microstructure of oxygen-deficient annealing-induced non-polar ZnO films with extremely low electrical resistivity

Published:2019 Issue:5 Volume:21 Page:791-795
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Qi Lin¹²³⁴⁵,Sun Benzhe¹²³⁴⁵,Wang Weizhen¹²³⁴⁵,Zhang Jian¹²³⁴⁵,Yang Huazhe⁶⁷⁸⁹¹⁰,Qi Yang¹²³⁴⁵^ORCID

Affiliation:

1. Institute of Materials Physics and Chemistry

2. School of Materials Science and Engineering

3. Northeastern University

4. Shenyang

5. PR China

6. Department of Biophysics

7. School of Fundamental Science

8. China Medical University

9. Shenyang 110122

10. China

Abstract

The influence of oxygen vacancy mediation on the microstructure of post-annealed non-polar ZnO films has been investigated.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C8CE01794H

Reference15 articles.

1. Schottky Barrier Thin Film Transistors Using Solution-Processed n-ZnO

2. Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

3. Broadband omnidirectional light detection in flexible and hierarchical ZnO/Si heterojunction photodiodes

4. Growth and characterization of nonpolar (10-10) ZnO transparent conductive oxide on semipolar (11–22) GaN-based light-emitting diodes

5. Experimental and theoretical studies of gold nanoparticle decorated zinc oxide nanoflakes with exposed {1 01¯0} facets for butylamine sensing

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