Enhanced thermoelectric transport properties of n-type InSe due to the emergence of the flat band by Si doping-Reference-Cited by-同舟云学术

Enhanced thermoelectric transport properties of n-type InSe due to the emergence of the flat band by Si doping

Published:2019 Issue:6 Volume:6 Page:1475-1481
ISSN:2052-1553
Container-title:Inorganic Chemistry Frontiers
language:en
Short-container-title:Inorg. Chem. Front.

Author:

Lee Kyu Hyoung¹²³⁴,Oh Min-Wook¹⁵⁶⁴,Kim Hyun-Sik¹⁷⁸⁴,Shin Weon Ho⁹¹⁰¹¹⁴^ORCID,Lee Kimoon¹²¹³¹⁴⁴^ORCID,Lim Jae-Hong¹¹⁵¹⁶⁴,Kim Ji-il¹¹⁷¹⁸⁴,Kim Sang-il¹¹⁷¹⁸⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. Yonsei University

3. Seoul 03722

4. South Korea

5. Hanbat National University

6. Daejeon 31458

7. Hongik University

8. Seoul 04066

9. Energy and Environment Division

10. Korea Institute of Ceramic Engineering and Technology

11. Jinju 52851

12. Department of Physics

13. Kunsan National University

14. Gunsan 54150

15. Gachon University

16. Seongnam 13120

17. University of Seoul

18. Seoul 02504

Abstract

An improved thermoelectric figure of merit (zT) of 0.14 at 795 K was obtained in 7% Si doped InSe due to the emergence of the flat band.

Funder

National Research Foundation of Korea

Korea Research Institute of Standards and Science

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/QI/C9QI00210C

Reference34 articles.

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4. Lead telluride as a thermoelectric material for thermoelectric power generation

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