Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates-Reference-Cited by-同舟云学术

Low threading dislocation density and antiphase boundary free GaAs epitaxially grown on on-axis Si (001) substrates

Published:2022 Issue:46 Volume:14 Page:17247-17253
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yang Junjie¹^ORCID,Li Keshuang¹,Jia Hui¹,Deng Huiwen¹,Yu Xuezhe¹^ORCID,Jurczak Pamela¹,Park Jae-Seong¹,Pan Shujie¹,Li Wei²,Chen Siming¹,Seeds Alwyn¹,Tang Mingchu¹^ORCID,Liu Huiyun¹

Affiliation:

1. Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE, UK

2. Institute of the Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, 100124, China

Abstract

The interactions between 1D defect threading dislocations and 2D defect antiphase boundaries and antiphase boundary annihilation in III–V materials on Si heteroepitaxy growth are revealed.

Funder

Royal Academy of Engineering

Engineering and Physical Sciences Research Council

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR04866C

Reference35 articles.

1. Electrically pumped continuous-wave III–V quantum dot lasers on silicon