Improving performance of monolayer arsenene tunnel field-effect transistors by defects-Reference-Cited by-同舟云学术

Improving performance of monolayer arsenene tunnel field-effect transistors by defects

Author:

Song Shun¹²,Gong Jian¹,Wen Hongyu²³,Yang Shenyuan²³^ORCID

Affiliation:

1. School of Physics and Technology, Inner Mongolia University, Hohhot 010021, P. R. China

2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China

3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China

Abstract

Suitable defect at the source-channel interface can significantly improve the performance of arsenene TFETs.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

Reference44 articles.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献