Probing resistivity and doping concentration of semiconductors at the nanoscale using scanning microwave microscopy-Reference-Cited by-同舟云学术

Probing resistivity and doping concentration of semiconductors at the nanoscale using scanning microwave microscopy

Published:2015 Issue:35 Volume:7 Page:14715-14722
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Brinciotti Enrico¹²³,Gramse Georg⁴⁵³,Hommel Soeren⁶⁷⁸,Schweinboeck Thomas⁶⁷⁸,Altes Andreas⁶⁷⁸,Fenner Matthias A.⁹¹⁰,Smoliner Juergen¹¹¹²,Kasper Manuel⁴⁵³,Badino Giorgio¹²³,Tuca Silviu-Sorin⁴⁵³,Kienberger Ferry¹²³

Affiliation:

1. Keysight Technologies Austria GmbH

2. Keysight Labs

3. 4020 Linz, Austria

4. Johannes Kepler University

5. Biophysics Institute

6. Infineon Technologies

7. Failure Analysis

8. 85579 Neubiberg, Germany

9. Keysight Technologies Deutschland GmbH

10. 60528 Frankfurt, Germany

11. Technical University of Vienna

12. Austria

Abstract

A new method to probe the resistivity and dopant concentration of semiconductors with nanoscale resolution using SMM is presented.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR04264J

Reference37 articles.

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4. 0.4 μm spatial resolution with 1 GHz (λ=30 cm) evanescent microwave probe

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