Gate-tunable large spin polarization in a few-layer black phosphorus-based spintronic device-Reference-Cited by-同舟云学术

Gate-tunable large spin polarization in a few-layer black phosphorus-based spintronic device

Author:

Zhang Liwen¹²³⁴⁵,Chen Jun⁶³⁴⁵⁷,Zheng Xiaohong⁸⁹¹⁰¹¹⁵^ORCID,Wang Bin¹²¹³¹⁴¹⁵⁵^ORCID,Zhang Lei¹²³⁴⁵^ORCID,Xiao Liantuan¹²³⁴⁵,Jia Suotang¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Quantum Optics and Quantum Optics Devices

2. Institute of Laser Spectroscopy

3. Shanxi University

4. Taiyuan 030006

5. China

6. Institute of Theoretical Physics

7. Collaborative Innovation Center of Extreme Optics

8. Key Laboratory of Materials Physics

9. Institute of Solid State Physics

10. Chinese Academy of Sciences

11. Hefei 230031

12. College of Physics and Optoelectronic Engineering

13. Shenzhen Key Laboratory of Advanced Thin Films and Applications

14. Shenzhen University

15. Shenzhen

Abstract

The spin polarization of a few-layer BP-based spintronic device can be efficiently controlled by the vertical gate induced Stark effect.

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Shaanxi Provincial Science and Technology Department

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference52 articles.

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