Epitaxial growth of YBa2Cu3O7−x films on Ce0.9La0.1O2−y buffered yttria-stabilized zirconia substrates by an all-chemical-solution route-Reference-Cited by-同舟云学术

Epitaxial growth of YBa2Cu3O7−x films on Ce0.9La0.1O2−y buffered yttria-stabilized zirconia substrates by an all-chemical-solution route

Published:2014 Issue:21 Volume:16 Page:4369-4372
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Zhao Yue¹²³,Wu Wei¹²³⁴⁵,Tang Xiao¹²³,Andersen Niels Hessel⁴²⁶,Han Zhenghe⁴⁵⁷,Grivel Jean-Claude¹²³

Affiliation:

1. Department of Energy Conversion and Storage

2. Technical University of Denmark

3. 4000 Roskilde, Denmark

4. Department of Physics

5. Tsinghua University

6. 2800 Lyngby, Denmark

7. 100084 Beijing, People's Republic of China

Abstract

A high critical current density of 3 MA cm⁻² (77 K, self-field) was achieved on a YBa₂Cu₃O₇ film deposited on Ce_0.9La_0.1O₂ buffered yttria-stabilized zirconia substrate, which is an all-chemical derived configuration.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CE/C4CE00230J

Reference17 articles.

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4. Chemical solution deposition of electronic oxide films

5. Development of all chemical solution derived Ce0.9La0.1O2 −y/Gd2Zr2O7buffer layer stack for coated conductors: influence of the post-annealing process on surface crystallinity

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