Layered post-transition-metal dichalcogenide SnGe<sub>2</sub>N<sub>4</sub> as a promising photoelectric material: a DFT study-Reference-Cited by-同舟云学术

Layered post-transition-metal dichalcogenide SnGe₂N₄ as a promising photoelectric material: a DFT study

Published:2022 Issue:17 Volume:12 Page:10249-10257
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Dat Vo D.¹,Vu Tuan V.²³^ORCID

Affiliation:

1. Group of Computational Physics and Simulation of Advanced Materials, Institute of Applied Technology, Thu Dau Mot University, Binh Duong Province, Vietnam

2. Division of Computational Physics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam

3. Faculty of Electrical & Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Vietnam

Abstract

The promising photoelectric semiconductor 2H SnGe2N4 has a tunable electronic structure which is favorable for the absorption of light in the infrared and visible regions.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA00935H

Reference77 articles.

1. The Optimal Electronic Structure for High-Mobility 2D Semiconductors: Exceptionally High Hole Mobility in 2D Antimony

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4. Two-dimensional heterostructures for energy storage

5. Two-Dimensional Materials for Thermal Management Applications

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